In order to prevent a protection member of a solar cell module from peeling off, provided in an embodiment of the present invention is a solar cell module (1000) provided with a film type solar cell element (100), a protection member (40), a sealing member (20), and an adhesion layer (30). The protection member is a fluorine-based resin disposed on the side of a light receiving surface (100A) of the film type solar cell element. The sealing member is disposed between the film type solar cell ele...

Provided is a polishing agent composition for CMP, capable of minimizing the generation of scratches and giving the surface of a device wafer a good evenness. The polishing agent for chemical and mechanical polishing of the invention contains following components (A), (B) and (C). Component (A): surface-modified inorganic oxide particles modified by a group in which the surface of the inorganic oxide particles contains a polyglycerol chain . Component (B): polishing agent. Component (C): water. ...

Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises an abrasive

A modifier for polyvinylidene fluoride (PVDF), which improves the adhesion of PVDF to a metal, a binder resin composition for battery and a battery using the PVDF modifier are provided. The modifier for polyvinylidene fluoride herein is a modifier in which the peeling strength of a specific cured film to an aluminium foil is 20 g/cm or more, and the specific cured film is obtained from a mixture of 6 parts by mass of the modifier for polyvinylidene fluoride and 14 parts by mass of a polyvinylide...

Provided are: an optical material used in an optical isolator and used in a UV-excited yellow-light emitting material capable of emitting yellow light stably and with high efficiency, even if a large current is passed therethrough to induce the emission of high-intensity light

Provided is an etching solution composition for a semiconductor substrate, the etching solution composition including, 3 to 20 wt% of hydrofluoric acid, 5 to 40 wt% of nitric acid, 10 to 60 wt% of acetic acid, 2 to 20 wt% of a promoter, and the remainder water, wherein the promoter is any one or two or more selected from ammonium based compounds or sulfonic acid based compounds.

PURPOSE: A method for preparing chiral indole succinic acid derivatives is provided to effectively obtain chiral indole succinic acid derivatives using a chiral catalyst. CONSTITUTION: A method for preparing chiral indole succinic acid derivatives using a chiral catalyst comprises the steps of making indole of chemical formula 2 react with a fumarate derivative of chemical formula 3 under the presence of the chiral catalyst.