To provide a polishing composition capable of suppressing occurrence of a level difference due to etching on the surface of a polishing object, when polishing the polishing object having a part containing a group III-V compound material. The polishing composition contains an oxidizer, and an anticorrosive agent. Preferably, the anticorrosive agent is a nitrogen-containing organic compound such as 1H-1,2,4-triazole or benzotriazole, or an organic compound having a carboxyl group, e.g. dicarboxyli...

This polishing composition, which is used in applications of polishing a polishing subject having a portion containing a group III-V compound material, contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent preferably is a nitrogen-containing organic compound such as 1H-1,2,4-triazole, benzotriazole, or the like, or an organic compound having a carboxyl group, for example, a dicarboxylic acid such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, ...

A POLISHING COMPOSITION OF THE PRESENT INVENTION CONTAINS SILICON DIOXIDE, AN ACID, AND WATER. SILICON DIOXIDE IS, FOR EXAMPLE, COLLOIDAL SILICA, FUMED SILICA, OR PRECIPITATED SILICA. THE ACID IS, FOR EXAMPLE, HYDROCHLORIC ACID, PHOSPHORIC ACID, SULFURIC ACID, PHOSPHONIC ACID, NITRIC ACID, PHOSPHINIC ACID, BORIC ACID, ACETIC ACID, ITACONIC ACID, SUCCINIC ACID, TARTARIC ACID, CITRIC ACID, MALEIC ACID, GLYCOLIC ACID, MALONIC ACID, METHANESULFONIC ACID, FORMIC ACID, MALIC ACID, GLUCONIC ACID, ALANI...